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PDF K3934 Data sheet ( Hoja de datos )
| Número de pieza | K3934 | |
| Descripción | MOSFET ( Transistor ) - 2SK3934 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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 1. 15A, N-ch, MOSFET - Toshiba  Hay una vista previa y un enlace de descarga de K3934 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK3934
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI)
2SK3934
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.23 (typ.)
• High forward transfer admittance: |Yfs| =8.2 S (typ.)
• Low leakage current: IDSS = 100 A (VDS = 500 V)
• Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
ID P
PD
EA S
IAR
EAR
Tc h
Tstg
Thermal Characteristics
Rating
500
500
±30
15
60
50
1.08
15
5.0
150
-55~150
Unit
V
V
V
A
W
J
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
?
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.5 °C/W
62.5 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 8.16mH, IAR = 15 A, RG = 25 Ω
1
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
2
3
1 2004-12-03
1 page  
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2SK3934
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
10
100
SINGLE PULSE
1 10
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.5°C/W
100 1 10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100
ID max (PULSED) *
100 µs *
ID max (CONTINUOUS) *
10
1 ms *
DC OPERATION
1 Tc = 25°C
0.1 *SINGLE NONREPETITIVE PULSE
Tc = 25°C
CURVES MUST BE DERATED
LINEALY WITH INCREASE IN
0.01
1
TEMPERATURE
10
100
1000
DRAIN−SOURCE VOLTAGE VDS (V)
1200
1000
EA S – Tch
800
600
400
200
0
25 50 75 100 125 150
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVE FORM
RG = 25 Ω
VDD = 90 V, L = 8.13 mH
? AS=
1 ⋅ L ⋅ I2
2
⋅
B
BVDSS
VDSS − VDD
5 2004-12-03
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3934.PDF ] | |
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