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PDF 6N1135 Data sheet ( Hoja de datos )
| Número de pieza | 6N1135 | |
| Descripción | (6N1135 / 6N1136) High Speed Optocoupler | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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6N1135/ 6N1136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd, Photodiode with Transistor
Output, 110 °C Rated
Features
• Operating Temperature from -55 °C to +110 °C
• Isolation Test Voltage: 5300 VRMS
• TTL Compatible
• High Bit Rates: 1.0 MBd
• Bandwidth 2.0 MHz
• Open-Collector Output
• External Base Wiring Possible
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL 1577 - File No. E52744 System Code H or J
• DIN EN 60747-5-2 (VDE0884)
• CUL - File No. E52744, equivalent to CSA bulletin
5A
NC 1
A2
C3
NC 4
8 C (VCC)
7 B (VB)
6 C (VO)
5 E (GND)
e3 Pbi179081
Pb-free
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible refer-
ence voltages
Description
The 6N1135 and 6N1136 are 110 °C rated optocou-
plers with a GaAIAs infrared emitting diode, optically
coupled with an integrated photo detector which con-
sists of a photo diode and a high-speed transistor in a
DIP-8 plastic package.
Order Information
Part
6N1135
6N1136
6N1135-X007
6N1136-X006
6N1136-X007
6N1136-X009
Remarks
CTR ≥ 7 %, DIP-8
CTR ≥ 19 %, DIP-8
CTR ≥ 7 %, SMD-8 (option 7)
CTR ≥ 19 %, DIP-8 400 mil (option 6)
CTR ≥ 19 %, SMD-8 (option 7)
CTR ≥ 19 %, SMD-8 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltages
Test condition
Forward current
Peak forward current
t = 1.0 ms, duty cycle 50 %
Maximum surge forward current t ≤ 1.0 µs, 300 pulses/s
Thermal resistance
Power dissipation
Tamb = 70 °C
Symbol
VR
IF
IFM
IFSM
Rth
Pdiss
Value
5.0
25
50
1.0
700
45
Unit
V
mA
mA
A
K/W
mW
Document Number 83909
Rev. 1.5, 26-Oct-04
www.vishay.com
1
1 page  
www.DataSheet4U.com
6N1135/ 6N1136
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.01
17585
–55°C
0°C
25°C
50°C
110°C
0.10
1.00 10.00 100.00
IF – Forward Current ( mA )
Figure 3. Forward Voltage vs. Forward Current
1000
100
VCC = VCE = 15 V
10
1
VCC = VCE = 5 V
0.1
0.01
–55 –35 –15 5 25 45 65 85 105 125
17590
Tamb – Ambient Temperature ( _C )
Figure 6. Collector-Emitter Dark Current vs. Ambient Temperature
12
11 IF = 25 mA
10
20 mA
9
8
7 15 mA
6
5 10 mA
4
3 5 mA
2
1
Tamb = 25_C,
VCC= 5 V, non–saturated
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
17586
VCE – Collector Emitter Voltage ( V )
Figure 4. Collector Current vs. Collector Emitter Voltage
8
7
Tamb = 25_C,
VCC= 5 V,
6 saturated
IF = 25 mA
20 mA
5 15 mA
4
10 mA
3
17629
2
1
0
0.0
5 mA
1 mA
0.1 0.2 0.3 0.4 0.5
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Current vs. Collector Emitter Voltage
2.0
1.8
1.6 IF = 1 mA
1.4
1.2 5 mA
1.0
0.8 10 mA
0.6
0.4
Normalized to IF = 10 mA,
Tamb = 25_C, VCC= 5 V
0.2 VO = 0.4 V, saturated
0.0
–55 –35 –15 5 25 45 65 85 105 125
17630
Tamb – Ambient Temperature ( °C )
Figure 7. Normalized Current Transfer Ratio vs. Ambient
Temperature
2.50
2.25
IF = 1 mA
2.00
1.75 5 mA
1.50
10 mA
1.25
1.00
0.75
0.50
0.25
Normalized to IF = 16 mA,
Tamb = 25_C, VCC= 5 V
VO = 0.4 V, saturated
16 mA
0.00
–55 –35 –15 5 25 45 65 85 105 125
17631
Tamb – Ambient Temperature ( °C )
Figure 8. Normalized Current Transfer Ratio vs. Ambient
Temperature
Document Number 83909
Rev. 1.5, 26-Oct-04
www.vishay.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 6N1135.PDF ] | |
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