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Numéro de référence | BMT1720B20 | ||
Description | SILICON MICROWAVE POWER TRANSISTOR | ||
Fabricant | Bipolarics | ||
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BIPOLARICS, INC Part Number BMT1720B20
SILICON MICROWAVE POWER TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
• Common Base, Class C Package Configuration
• High Output Power
20 W @ 1.7 to 2.0 GHz
• High Gain Bandwidth Product
• Higfth=G6a.i0nGHz @ IC = 3200 mA
GPE = 7.0 dB to 8.2 dB
• High Reliability
Gold Metallization
Nitride Passivation
• Diffused Ballast Resistors
• BeO Package
• Built-In Matching Network
for Broadband Operation
PERFORMANCE DATA:
• Electrical Characteristics (TA = 25oC)
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING UNITS
VCBO
VCEO
VEBO
IC
TJ
TSTG
Collector-Base Voltage
50
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (instantaneous)
28
3.5
3200
Junction Temperature
200
Storage Temperature
-65 to 200
V
V
V
mA
oC
oC
θJC Thermal Resistance
6.5 C/W
SYMBOL
P1dB
η
PARAMETERS & CONDITIONS
VCE =28V, IC = 3200 mA, Class C
Power output at 1 dB compression:
f = 1.7 GHz
UNIT
W
Collector Efficiency
Class C
%
MIN.
TYP. MAX.
20
50
hFE Forward Current Transfer Ratio: VCB = 5V, IC = 100 mA
10 60 100
COB Output Capacitance:
PT Total Power Dissipation
f = 1 MHz, I E = 0
pF
W
4.5
40
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Pages | Pages 5 | ||
Télécharger | [ BMT1720B20 ] |
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