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Número de pieza TIG004SS
Descripción Light-Controlling Strobe Applications
Fabricantes Sanyo Semicon Device 
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Ordering number : ENN7397
TIG004SS
N-Channel IGBT
TIG004SS
Light-Controlling Strobe Applications
Features
Low-saturation voltage.
4V drive.
Enhansment type.
Built-in Gate-to-Emitter protection diode.
Package Dimensions
unit : mm
2203
[TIG004SS]
85
Specifications
Absolute Maximum Ratings at Ta=25°C
1
5.0
4
0.595 1.27 0.43
1 : Emitter
2 : Emitter
3 : Emitter
0.2 4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : SOP8
Parameter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Channel Temperature
Storage Temperature
Symbol
VCES
VGES
VGES
ICP
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW500µs, duty cycle0.5%
Ratings
400
±6
±8
150
150
--40 to +150
Unit
V
V
V
A
°C
°C
Parameter
Symbol
Conditions
min
Collector-to-Emitter Breakdown Voltage
V(BR)CES IC=5mA, VGE=0
400
Collector-to-Emitter Cutoff Current
ICES
VCE=320V, VGE=0
Gate-to-Emitter Leakage Current
IGES
VGE=±6V, VCE=0
Gate-to-Emitter Threshold Voltage
VGE(off) VCE=10V, IC=1mA
0.5
Collector-to-Emitter Saturation Voltage
VCE(sat)1
VCE(sat)2
IC=150A, VGE=4V
IC=60A, VGE=2.5V
Input Capacitance
Cies
VCE=10V, f=1MHz
Output Capacitance
Coes
VCE=10V, f=1MHz
Reverse Transfer Capacitance
Cres
VCE=10V, f=1MHz
Note : TIG004SS has protection diode between gate and emitter but handling it requires sufficient care to be taken.
Ratings
typ
4.2
2.4
3300
75
40
max
10
±10
1.2
5.5
3.4
Unit
V
µA
µA
V
V
V
pF
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS IM TA-3794 No.7397-1/3

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