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What is RIC7113L4?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER".


RIC7113L4 Datasheet PDF - International Rectifier

Part Number RIC7113L4
Description RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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PD-93921
RIC7113L4
RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
Features
Product Summary
n Total dose capability to 100K Rad (Si)
n Floating channel designed for bootstrap operation
n Fully operational to +400V
n Tolerant to negative transient voltage
n dV/dt immune
n Gate drive supply range from 10 to 20V
VOFFSET
IO+/-
VOUT
ton/off (typ.)
Delay Matching(typ.)
400V max.
2A / 2A
10 - 20V
120 & 100 ns
5 ns
n Undervoltage lockout for both channels
n Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n CMOS Schmitt-triggered inputs with pull-down
n Cycle by cycle edge-triggered shutdown logic
n Matched propagation delay for both channels
n Outputs in phase with inputs
n Hermetically Sealed
n Lightweight
Absolute Maximum Ratings
Description
The RIC7113L4 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized mono-
lithic construction. Logic inputs are compatible with stan-
dard CMOS or LSTTL outputs. The output drivers feature
a high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The floating
channel can be used to drive an N-channel power MOSFET
or IGBT in the high side configuration which operates up
to 400 volts.
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute
voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air
conditions.
Symbol
VB
VS
VHO
VCC
VLO
VDD
VSS
VIN
dVs/dt
PD
RthJA
TJ
TS
TL
Parameter
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Allowable Offset Supply Voltage Transient (Figure 2)
Package Power Dissipation @ TA £ +25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Weight
Min. Max.
-0.5 VS + 20
— 400
VS - 0.5
-0.5
VB + 0.5
20
-0.5
-0.5
VCC - 20
VSS - 0.5
VCC + 0.5
VSS + 20
VCC + 0.5
VDD + 0.5
50
— 1.6
— 125
-55 125
-55 150
— 300
1.3 (typical)
Units
V
V/ns
W
°C/W
°C
g
www.irf.com
1
5/4/2000

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RIC7113L4 equivalent
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Radiation characteristics
RIC7113L4
International Rectifier radiation hardened Gate Drivers have been characterized in heavy ion environment
for Single Event Effects (SEE). Single Event Effects characterization data is illustrated below. For Static Bias
Test Conditions refer to figure 8.
Single Event Effect Safe Operating Area
Ion LET
Energy
MeV/(mg/cm2)) (MeV)
Br 37
284
I 60
344
Au 82
346
I 85
344
Au 100
346
Angle
(degrees)
0
0
0
45
35
@VBS=-10V
400
325
250
400
400
VS (V)
@VBS=-15V
400
250
200
400
400
Note: VCC/VDD = 20V, except for LET=100, then VCC/VDD = 17.5V
@VBS=-17.5V
400
200
175
350
350
450
400
350
300
250
200
150
100
50
0
-10
STATIC BIAS
-15
VB (V)
Br, 0° angle
I, 0° angle
Au, 0° angle
I, 45° angle
Au, 35° angle
-17.5
Single Event Effect, Safe Operating Area
www.irf.com
5


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
RIC7113L4The function is RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER. International RectifierInternational Rectifier

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