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PDF K3566 Data sheet ( Hoja de datos )
| Número de pieza | K3566 | |
| Descripción | MOSFET ( Transistor ) - 2SK3566 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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 1. N-Ch, 900V, MOSFET - 2SK3566  Hay una vista previa y un enlace de descarga de K3566 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK3566
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3566
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.0 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 720 V)
• Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
900
900
±30
2.5
7.5
40
216
2.5
4
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
2
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Rth (ch-c)
3.125
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5 °C/W
1
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 63.4 mH, IAR = 2.5 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1 2005-01-24
1 page  
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2SK3566
rth – tw
10
1 Duty=0.5
0.2
0.1
0.1 0.05
0.02
0.01 0.01
0.001
10μ
100μ
SINGLE PULSE
PDM
t
T
DuDtyut=y t=/Tt/T
RtRh t(hch(c-ch)-c=) 3=.112.255°C°C/W/W
1ｍ
10ｍ
100ｍ
1
10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100
10 ID max (PULSED) *
ID max (CONTINUOUS) *
1 DC OPERATION
Tc = 25°C
1 ms *
100 µs *
0.1
※ SINGLE NONREPETITIVE PULSE Tc=25℃
CURVES MUST BE DERATED LINEARLY WITH
INCREASE IN TEMPERATURE.
0.01
1 10
100
VDSS max
1000
10000
DRAIN-SOURCE VOLTAGE VDS (V)
EAS – Tch
250
200
150
100
50
0
25 50
75 100 125 150
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVE FORM
RG = 25 Ω
VDD = 90 V, L = 43.4mH
ΕAS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
B
BVDSS
VDSS − VDD
⎟⎟⎠⎞
5 2005-01-24
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3566.PDF ] | |
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