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PDF D2P6M Data sheet ( Hoja de datos )
| Número de pieza | D2P6M | |
| Descripción | Standard Gate SCR | |
| Fabricantes | DnI | |
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D2P6M
Sensitive Gate
Silicon Controlled -
Rectifiers
Symbol
2. Anode
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 2.0 A )
On-State Voltage (2.2V(max) @ ITM= 4A)
Pb - Free Packages are Available
1.Cathode
General Description
3.Gate
Sensitive-gate triggering thyristor is suitable for the application
where requiring low gate triggerring current system
Used for electric blanket ,electronic jar ,temperature con-
trol,lighting control such as a entertainment display.
Automatic ignition system , Battery charger .
BVDRM = 600V
IT(RMS) = 2.0 A
ITSM = 4 A
TO-126
3
2
1
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
sine wave,50 to 60Hz,gate open
half sine wave : TC =77 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
PGM
Forward Peak Gate Power Dissipation
TC= 77 °C, pulse width 1.0
PG(AV)
Forward Average Gate Power Dissipation TC =77°C,pulse width 1.0
IFGM
Forward Peak Gate Current
TC =77 °C, pulse width 1.0
VRGM
TJ
TSTG
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TC= 77 °C, pulse width 1.0
Ratings
600
2.0
4
20
1.65
0.5
0.1
0.2
5.0
- 40 ~ 125
- 40 ~ 125
Units
V
A
A
A
A2s
W
W
A
V
°C
°C
April, 2005. Rev.0
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
1/5
1 page  
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D2P6M
TO-126 Package Dimension
mm Inch
Dim.
Min. Typ. Max. Min. Typ. Max.
A 7.5
7.9 0.295
0.311
B 10.8
11.2 0.425
0.441
C 14.2
14.7 0.559
0.579
D 2.7
2.9 0.106
0.114
E 3.8
0.150
F 2.5
0.098
G 1.2
1.5 0.047
0.059
H 2.3
0.091
I 4.6
0.181
J 0.48
0.62 0.019
0.024
K 0.7
0.86 0.028
0.034
L 1.4
0.055
3.2 0.126
B
F
C
A
E
1
2
3
D
G
H
I
JK
L
1. CT1athode
2. AT2node
3. Gate
5/5
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| PDF Descargar | [ Datasheet D2P6M.PDF ] | |
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