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DBT152-600 fiches techniques PDF

DnI - Standard Gate SCR

Numéro de référence DBT152-600
Description Standard Gate SCR
Fabricant DnI 
Logo DnI 





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DBT152-600 fiche technique
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DBT152-600
Standard Gate
Silicon Controlled -
Rectifiers
Symbol
2. Anode
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 20 A )
Low On-State Voltage (1.5V(Typ.)@ ITM)
Non-isolated Type
1.Cathode
3.Gate
General Description
Standard gate triggering thyristor is suitable for the application
where requiring high bidirectional blocking voltage capability and
also suitable for over voltage protection ,motor control circuit in
power tool, inrush current limit circuit and heating control system.
BVDRM = 600V
IT(RMS) = 20 A
ITSM = 220A
TO-220
123
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
sine wave,50 to 60Hz,gate open
half sine wave : TC =103 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
di/dt Critical rate of rise of on-state current
TC = 103 °C, pulse width 1.0
PGM
Forward Peak Gate Power Dissipation
TC = 103 °C,pulse width 1.0
PG(AV)
Forward Average Gate Power Dissipation TC = 103 °C, pulse width 1.0
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TC =103 °C, pulse width 1.0
Ratings
600
12.7
20
220
242
50
20
0.5
5
5
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
A/
W
W
A
V
°C
°C
June, 2005. Rev.0
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
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