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DBT151F-600 fiches techniques PDF

DnI - Standard Gate SCR

Numéro de référence DBT151F-600
Description Standard Gate SCR
Fabricant DnI 
Logo DnI 





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DBT151F-600 fiche technique
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DBT151F-600
Standard Gate
Silicon Controlled -
Rectifiers
Symbol
2. Anode
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 12 A )
Low On-State Voltage (1.5V(Typ.)@ ITM)
Isolation Voltage ( VISO = 2500V AC )
1.Cathode
3.Gate
General Description
Standard gate triggering thyristor is fully isolated package suitable
for the application where requiring high bidirectional blocking volt-
age capability and also suitable for over voltage protection ,motor
control circuit in power tool, inrush current limit circuit and heating
control system.
BVDRM = 600V
IT(RMS) = 12 A
ITSM = 120 A
TO-220F
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
sine wave,50 to 60Hz,gate open
half sine wave : TC = 78 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
I2t I2t for Fusing
t = 8.3ms
di/dt Critical rate of rise of on-state current
PGM
Forward Peak Gate Power Dissipation
TC = 78 °C, pulse width 1.0
PG(AV)
Forward Average Gate Power Dissipation TC = 78 °C,pulse width 1.0
IFGM
Forward Peak Gate Current
TC = 78 °C, pulse width 1.0
VRGM
VISO
TJ
TSTG
Reverse Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
TC =78 °C, pulse width 1.0
A.C. 1 minute
June , 2005. Rev.0
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
Ratings
600
7.6
12
120
72
50
5
0.5
2
5
2500
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
A/
W
W
A
V
V
°C
°C
1/5

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