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Numéro de référence | DFB70N06 | ||
Description | N-Channel MOSFET | ||
Fabricant | DnI | ||
Logo | |||
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DFB70N06
N-Channel MOSFET
Features
■ Low RDS(on) (0.014Ω )@VGS=10V
■ Low Gate Charge (Typical 70nC)
■ Low Crss (Typical 160pF)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range
1.Gate
General Description
This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for battery operated systems like a DC-DC converter
motor control , ups ,audio amplifier.
Also, especially designed to minimize rds(on) , low gate charge
and high rugged avalanche characteristics.
2.Drain
3.Source
BVDSS = 60V
RDS(ON) = 0.014 ohm
ID = 70A
TO-263
(D2-Pak)
2
1
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 3)
Value
60
70
51
280
±25
800
7.0
158
1.05
- 55 ~ 175
300
Value
Typ.
-
0.5
-
Max.
0.95
-
62.5
Units
V
A
A
A
V
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
May, 2006, Rev. 0.
Copyright@ D&I Semiconductor Co., Ltd., All rights reserved.
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Pages | Pages 7 | ||
Télécharger | [ DFB70N06 ] |
No | Description détaillée | Fabricant |
DFB70N06 | N-Channel MOSFET | DnI |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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