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Numéro de référence | DFP640 | ||
Description | N-Channel MOSFET | ||
Fabricant | DnI | ||
Logo | |||
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N-Channel MOSFET
Features
RDS(on) (Max 0.18 )@VGS=10V
Gate Charge (Typical 44nC)
Improved dv/dt Capability
High ruggedness
100% Avalanche Tested
1.Gate
2.Drain
3.Source
General Description
This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) , low gate charge
and high rugged avalanche characteristics.
The TO-220 pkg is well suited for DC-DC converter and S-
Correction in color-monitor system.
DFP640
BVDSS = 200V
RDS(ON) = 0.18 ohm
ID = 18A
TO-220
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
200
18
11
72
±30
220
13.5
5.5
135
1.11
- 55 ~ 150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
Value
Typ.
-
0.5
-
Max.
0.9
-
62.5
March, 2005. Rev. 0.
Copyright@ D&I Semiconductor Co., Ltd., Korea . All rights reserved.
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1/7
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Pages | Pages 7 | ||
Télécharger | [ DFP640 ] |
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