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DFK1N60 fiches techniques PDF

DnI - N-Channel MOSFET

Numéro de référence DFK1N60
Description N-Channel MOSFET
Fabricant DnI 
Logo DnI 





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DFK1N60 fiche technique
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DFK1N60
N-Channel MOSFET
N-Channel MOSFET
Features
High ruggedness
RDS(on) (Max 11.5 )@VGS=10V
Gate Charge (Typical 7nC)
Improved dv/dt Capability
100% Avalanche Tested
{ 2. Drain
1. Gate{
{ 3. Source
General Description
This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The SOT-223 pkg is well suited for
charger SMPS and small power inverter application.
BVDSS = 600V
RDS(ON) = 11.5 ohm
ID = 0.8A
SOT-223
2
1
23
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
600
0.8
0.63
3.2
±30
48
0.3
4.5
3
0.024
- 55 ~ 150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
-
Value
Typ.
-
-
Max.
12
42
Units
°C/W
°C/W
Note: RθJA is the sum of the junction to case and case to ambient resistance where the case thermal resistance is defined as the solder
mounting suface of the drain pins .
( 42°C/W when mounted on a 1
Rinθ2JCpaisd
guaranteed by
of 2 oz copper
design
)
while
RθJA
is
determined
by
the
user’s
board
design.
Jan, 2005. Rev. 0.
1/7
Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved.

PagesPages 7
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