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DnI - N-Channel MOSFET

Numéro de référence DFP4N60
Description N-Channel MOSFET
Fabricant DnI 
Logo DnI 





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DFP4N60 fiche technique
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DFP4N60
N-Channel MOSFET
N-Channel MOSFET
Features
High ruggedness
RDS(on) (Max 2.5 )@VGS=10V
Gate Charge (Typical 25nC)
Improved dv/dt Capability
100% Avalanche Tested
1. Gate{
{ 2. Drain
◀▲
{ 3. Source
BVDSS = 600V
RDS(ON) = 2.5 ohm
ID = 4A
General Description
This N-channel enhancement mode field-effect power transistor
using D& I semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220 pkg is well suited for
adaptor power unit and small power inverter application.
Absolute Maximum Ratings
TO-220
123
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
600
4
2.5
16
±30
262
10
4.5
100
0.8
- 55 ~ 150
300
Value
Typ.
-
0.5
-
Max.
1.25
-
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Mar, 2006. Rev. 1.
Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved.
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