|
|
PDF FPD3000 Data sheet ( Hoja de datos )
| Número de pieza | FPD3000 | |
| Descripción | 2W POWER PHEMT | |
| Fabricantes | Filtronic Compound Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FPD3000 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
FPD3000
2W POWER PHEMT
• FEATURES
♦ 32.5 dBm Linear Output Power at 12 GHz
♦ 6.5 dB Power Gain at 12 GHz
♦ 8 dB Maximum Stable Gain at 12 GHz
♦ 42 dBm Output IP3
♦ 30% Power-Added Efficiency
DRAIN
BOND
PAD (4X)
SOURCE
BOND
PAD (2x)
• DESCRIPTION AND APPLICATIONS
GATE
BOND
PAD (4X)
DIE SIZE (µm): 830 x 470
DIE THICKNESS: 75 µm
BONDING PADS (µm): >75 x 60
The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),
featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by high-resolution stepper-based
photolithography. The recessed and offset Gate structure minimizes parasitics to optimize
performance. The epitaxial structure and processing have been optimized for reliable high-power
applications. The FPD3000 also features Si3N4 passivation and is available in a P100 flanged
ceramic package and in the low cost plastic SOT89 plastic package.
Typical applications include commercial and other narrowband and broadband high-performance
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 12 GHz USING CW SIGNAL
Power at 1dB Gain Compression
Maximum Stable Gain (S21/S12)
Power Gain at P1dB
Power-Added Efficiency
P1dB
SSG
G1dB
PAE
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
IP3
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS;
POUT = P1dB
VDS = 8V; IDS = 50% IDSS
Matched for optimal power
Tuned for best IP3
31.5 32.5
7.0 8.0
6.0 6.5
30
42
44
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
θJC
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 3 mA
IGS = 3 mA
IGD = 3 mA
VDS > 6V
750 930
1.5
800
10
1.0
12.0 14.0
14.5 16.0
20
Max Units
dBm
dB
dB
%
dBm
1100 mA
A
mS
µA
V
V
V
°C/W
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised: 11/17/04
Email: [email protected]
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FPD3000.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FPD3000 | 2W POWER PHEMT | Filtronic Compound Semiconductors |
| FPD3000P100 | 2W PACKAGED POWER PHEMT | Filtronic Compound Semiconductors |
| FPD3000SOT89 | HIGH LINEARITY PACKAGED PHEMT | Filtronic Compound Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |