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PDF KMB7D1DP30QA Data sheet ( Hoja de datos )
| Número de pieza | KMB7D1DP30QA | |
| Descripción | Trench MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and SMPS.
FEATURES
VDSS=-30V, ID=-7.1A
Drain-Source ON Resistance
RDS(ON)=25m (Max.) @ VGS=-10V
RDS(ON)=41m (Max.) @ VGS=-4.5V
Super Hige Dense Cell Design
KMB7D1DP30QA
Dual P-Ch Trench MOSFET
DP
H
T
G
L
A
85
DIM MILLIMETERS
A 4.85+_ 0.2
B1 3.94 +_ 0.2
B2 6.02+_ 0.3
D 0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H 1.63 +_ 0.2
14
L 0.65 +_ 0.2
P 1.27
T 0.20+0.1/-0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC@TA=25
DC@TA=70
Pulsed
Drain-Source-Diode Forward Current
VDSS
VGSS
ID
IDP
IS
-30 V
22 V
-7.1
-5.7 A
-40
-1.7 A
Drain Power Dissipation
TA=25
TA=70
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note : Surface Mounted on FR4 Board, t 10sec.
PD
Tj
Tstg
RthJA
1.1
0.7
150
-55 150
110
W
/W
FLP-8
KMB7D1DP
30QA
705
PIN CONNECTION (TOP VIEW)
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
1
2
3
4
8
7
6
5
2007. 4. 17
Revision No : 0
1/5
1 page  
KMB7D1DP30QA
Fig9. Gate Charge Circuit and Wave Form
Schottky
Diode
ID
0.5 VDSS
1.0 mA
VGS
ID
VDS
VGS
-4.5V
Qgs
Qgd
Qg
Q
Fig10. Resistive Load Switching
0.5 VDSS
6Ω
-10 V
VGS
RL td(on)
VGS
10%
VDS
ton
tr
VDS 90%
td(off)
toff
tf
2007. 4. 17
Revision No : 0
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet KMB7D1DP30QA.PDF ] | |
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