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KMB6D0DN30QA fiches techniques PDF

KEC - Trench MOSFET

Numéro de référence KMB6D0DN30QA
Description Trench MOSFET
Fabricant KEC 
Logo KEC 





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KMB6D0DN30QA fiche technique
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TECHNICAL DATA
GENERAL DESCRIPTION
This planer stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and SMPS.
FEATURES
VDSS=30V, ID=6A.
Drain-Source ON Resistance.
RDS(ON)=28m (Max.) @VGS=10V
RDS(ON)=42m (Max.) @VGS=4.5V
Super High Dense Cell Design
High Power and Current Handing Capability
KMB6D0DN30QA
Dual N-Ch Trench MOSFET
DP
H
T
G
L
A
DIM MILLIMETERS
A 4.85 +_ 0.2
B1 3.94 +_ 0.2
85
B2 6.02+_ 0.3
D 0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H 1.63 +_ 0.2
14
L 0.65 +_ 0.2
P 1.27
T 0.20+0.1/-0.05
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING UNIT
Drain Source Voltage
Gate Source Voltage
Drain Current
DC
Pulsed (note1)
Drain Source Diode Forward Current
Drain Power Dissipation
25
100
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
* : Surface Mounted on FR4 Board, t 10sec.
VDSS
VGSS
ID *
IDP
IS
PD *
Tj
Tstg
RthJA*
30
20
6
20
1.3
2
1.6
-50~150
-50~150
78
V
V
A
A
A
W
W
/W
PIN CONNECTION (TOP VIEW)
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
1
2
3
4
8
7
6
5
FLP-8
2007. 4. 3
Revision No : 0
1/5

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