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Panasonic Semiconductor - Reflective photosensor

Numéro de référence ON2173
Description Reflective photosensor
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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ON2173 fiche technique
wwwR.DeaflteacSthiveeet4PUh.cootomsensors (Photo Reflectors)
CNB1009 (ON2173)
Reflective Photosensor
Overview
CNB1009 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
Features
Fast response : tr, tf = 6 µs (typ.)
Small size, light weight
Applications
Detection of paper, film and cloth
Optical mark reading
12.0±0.3
(4.0) 2-ø2.3
1.0 (1.0) 1.0
19.0±0.3
2-9.5±0.2
ø2.2
Unit : mm
(15.5)
2
3
Detection of coin and bill
Detection of position and edge
Start, end mark detection of magnetic tape
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings
Input (Light
emitting diode)
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector to emitter voltage
VR
IF
PD*1
VCEO
3
50
75
20
Output (Photo Emitter to collector voltage
transistor) Collector current
Collector power dissipation
Operating ambient temperature
Temperature
Storage temperature
VECO
5
IC 30
PC*2 100
Topr –25 to +85
Tstg –30 to +100
Unit
V
mA
mW
V
V
mA
mW
˚C
˚C
14
(Note) ( ) Dimension is reference
1 23
4
Pin connection
*1 Input power derating ratio is
1.0 mW/˚C at Ta 25˚C.
*2 Output power derating ratio is
1.34 mW/˚C at Ta 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Forward voltage (DC)
Input
characteristics Reverse current (DC)
Capacitance between pins
VF IF = 50mA
IR VR = 3V
Ct VR = 0V, f = 1MHz
1.2 1.5 V
10 µA
50 pF
Output characteristics Collector cutoff current
ICEO VCE = 10V
0.2 µA
Collector to emitter capacitance CC VCE = 10V, f= 1MHz
5 pF
Transfer Collector current
IC*1 VCC = 10V, IF = 20mA, RL = 100
100 500
µA
characteristics Response time tr*2 , tf*3 VCC = 10V, IC = 1mA, RL = 1006 µs
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
0.3 V
*1 Transfer characteristics measurement circuit
(Ambient light is shut off completely)
IF IC VCC
d = 5 mm
RL
Standard white paper (Reflective ratio 90%)
*2 Time required for the collector current to increase from
10% to 90% of its final value.
*3 Time required for the collector
current to decrease from 90%
90%
10%
to 10% of its initial value.
tr tf
Note) The part number in the parenthesis shows conventional part number.
1

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