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GM2305A fiches techniques PDF

GTM - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence GM2305A
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant GTM 
Logo GTM 





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GM2305A fiche technique
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Pb Free Plating Product
ISSUED DATE :2006/05/04
REVISED DATE :
GM2305A
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
80m
-3.2A
Description
The GM2305A provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The GM2305A is universally preferred for all commercial-industrial surface mount applications and suited for
low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Surface Mount Device
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5°TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Ratings
-30
±12
-3.2
-2.6
-10
1.5
0.012
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
Value
83.3
Unit
/W
GM2305A
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