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PDF BGY288 Data sheet ( Hoja de datos )
| Número de pieza | BGY288 | |
| Descripción | Power amplifier | |
| Fabricantes | NXP Semiconductors | |
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BGY288
Power amplifier with integrated control loop for GSM850,
EGSM900, DCS1800 and PCS1900
Rev. 01 — 2 February 2005
Preliminary data sheet
1. Product profile
1.1 General description
The BGY288 is a power amplifier module in a SOT775 surface mounted package with a
plastic cap. In the module, a mix of state of the art technologies as InGaP, Si-Bicmos and
Si passive integration are used to combine high performance with a small size. The
module comprises two functional sections, one for low-band (GSM850/EGSM900) and
one for high-band (DCS1800/PCS1900) with internal power detection, power control loop,
input and output matching; see Figure 2. The power control circuit ensures a stable RF
power output which is set by the voltage level on pin PC. The power control circuit is
stabilized to compensate for variations in supply voltage, input power and temperature,
and has a control range fully compliant with European Telecommunication Standards
Institute (ETSI) time mask and power spectrum requirements.
1.2 Features
1.2.1 General features
s Quad band GSM amplifier
s 34 dBm controlled output power for
GSM850/EGSM900
s Suited for GPRS class 12
(duty cycle δ = 4 : 8)
s Integrated power control loop
s 3.6 V nominal supply voltage
s Very small size (8 mm × 8 mm)
s 32.5 dBm controlled output power for
DCS1800/PCS1900
s Easy on/off and band select by digital
control voltage
s Internal input and output matching
s Specification based on 3GPP TS 45.005
1.2.2 RF performance
RF performance with a typical pulsed, controlled output power at Tmb = 25 °C;
VBAT = 3.6 V; VSTAB = 2.8 V; ZS = ZL = 50 Ω; PD(LB) = 2 dBm / PD(HB) = 0 dBm; δ = 2 : 8.
s f = 824 MHz to 849 MHz; η @ PSAT = 50 %; PL = 34 dBm
s f = 880 MHz to 915 MHz; η @ PSAT = 55 %; PL = 34 dBm
s f = 1710 MHz to 1785 MHz; η @ PSAT = 50 %; PL = 32.5 dBm
s f = 1850 MHz to 1910 MHz; η @ PSAT = 50 %; PL = 32.5 dBm
1.3 Applications
s Digital cellular radio systems with Time Division Multiple Access (TDMA) operation
(GSM systems) in four frequency bands: 824 MHz to 849 MHz, 880 MHz to 915 MHz,
1710 MHz to 1785 MHz and 1850 MHz to 1910 MHz.
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Philips Semiconductors
6. Timing
dB
PL(LB), PL(HB)
+4
+1
−1
−6
(**)
−30
(***)
BGY288
Power amplifier with integrated control loop
(*)
10 µs 8 µs 10 µs
(147 bits)
7056/13 (542.8) µs
10 µs 8 µs 10 µs
t
VSTAB
TXON
BAND
PD(LB), PD(HB)
PC
td1
td4
td2
td3
td6
td5
td7
td8
Fig 3. Timing diagram
td9
001aab847
Table 4: Timing characteristics
ZS = ZL = 50 Ω; PD(LB) = 0 dBm to 4 dBm / PD(HB) = −2 dBm to +2 dBm; VBAT = 3.1 V to 4.6 V;
VSTAB = 2.6 V to 3.0 V; Tmb = −20 °C to 85 °C; δ = 1 : 8 to 4 : 8; unless otherwise specified.
Symbol Parameter
Min Typ Max Unit
td1 delay time; VSTAB to high voltage before TXON goes HIGH 0 - - µs
td2 delay time; BAND to LOW or HIGH before TXON goes HIGH 0 - - µs
td3 delay time; RF signal on RFI_HB or RFI_LB before PC
ramp-up
0 - - µs
td4 delay time; PC start of ramp-up after TXON goes HIGH 10 - - µs
td5 delay time; TXON to LOW after transition of PC to off
condition
0 - - µs
td6 delay time; VSTAB to 0 V, after TXON goes LOW
10 - - µs
td7 delay time; change of BAND after TXON goes LOW
0 - - µs
td8 delay time; removal of RF signal on RFI_HB or RFI_LB after 0 - - µs
transition of PC to off condition
td9 time between PC ramp-up and actual PL increase
- - 3 µs
9397 750 14011
Preliminary data sheet
Rev. 01 — 2 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 22
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Philips Semiconductors
BGY288
Power amplifier with integrated control loop
Table 8: Dynamic characteristics DCS1800/PCS1900 transmit mode
ZS = ZL = 50 Ω; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 °C; δ = 1 : 8 to 4 : 8; tp = 575 µs to 2300 µs; PD(HB) = 0 dBm; spurious
signals on PD(HB) < −50 dBm; HB TX mode selected;
f = 1710 MHz to 1785 MHz for DCS1800; f = 1850 MHz to 1910 MHz for PCS1900; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
PD(HB)
VPC
PL(HB)
η
RF input power
reference voltage to set
output power
available output power
efficiency DCS1800
f = 1747.6 MHz for DCS1800;
f = 1880 MHz for PCS1900;
PL(HB) = 32.5 dBm
f = 1747.6 MHz for DCS1800;
f = 1880 MHz for PCS1900;
PL(HB) = −3 dBm
VPC = 2.2 V
VPC = 2.0 V; VBAT = 3.2 V;
PD(HB) = −2 dBm; δ = 2 : 8
VPC = 2.0 V; VBAT = 3.2 V;
PD(HB) = −2 dBm; δ = 2 : 8; Tmb = 85 °C
saturated power
−2 0
--
+2 dBm
2V
0.2 - - V
32.7 33.5 -
31.8 -
-
31.3 -
-
- 50 -
dBm
dBm
dBm
%
efficiency PCS1900
PL(HB) = 31.3 dBm
saturated power
- 45 - %
- 50 - %
∆PL(HB)
output power variation at
nominal temperature range
output power variation at
extreme temperature range
output power variation of
frequency
PL(HB) = 31.3 dBm
PL(HB) = 28 dBm to 32 dBm; set by PC
PL(HB) = 15 dBm to 28 dBm; set by PC
PL(HB) = 5 dBm to 15 dBm; set by PC
PL(HB) = 0 dBm to 5 dBm; set by PC
PL(HB) = 28 dBm to 32 dBm; set by PC
PL(HB) = 15 dBm to 28 dBm; set by PC
PL(HB) = 5 dBm to 15 dBm; set by PC
PL(HB) = 0 dBm to 5 dBm; set by PC
PL(HB) = 30 dBm to 32 dBm; set by PC
-
[1] [2] −0.7
[1] [2] −1
[1] [2] −2
[1] [2] −3
[1] [3] −1.2
[1] [3] −1.5
[1] [3] −2.5
[1] [3] −3.5
[1] [4] −0.3
45
-
-
-
-
-
-
-
-
-
-%
+0.7 dB
+1 dB
+2 dB
+3 dB
+1.2 dB
+1.5 dB
+2.5 dB
+3.5 dB
+0.3 dB
H2 to H7
harmonics
isolation
PL(HB) ≤ 32 dBm
PD(HB) = 2 dBm; VPC = 0.15 V; Standby
mode
- - −5 dBm
- - −36 dBm
PD(HB) = 2 dBm; VPC = 0.15 V; HB TX
mode
- - −36 dBm
VSWRin input VSWR
Pn noise power
CG conversion gain
PL(HB) < 0 dBm
PL(LB) = 2 dBm to 32 dBm
f0 = 1785 MHz for DCS1800;
f0 = 1910 MHz for PCS1900; f0 + 20 MHz;
RBW = 100 kHz; PL(HB) < 32 dBm
f0 = 1785 MHz for DCS1800;
f0 = 1 910 MHz for PCS1900;
PL(HB) = 0 dBm to 32 dBm;
fSS1 = f0 − 20 MHz; PSS1 = −40 dBm;
CG = PL(CON) − PSS1; see Figure 4
- - 6:1
- 2:1 3:1
- - −77 dBm
- - 25 dB
9397 750 14011
Preliminary data sheet
Rev. 01 — 2 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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