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PDF MAS3795 Data sheet ( Hoja de datos )

Número de pieza MAS3795
Descripción Silicon epitaxial planar type
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! MAS3795 Hoja de datos, Descripción, Manual

wwwS.DchatoatStkhyeeBt4aUr.rcieomr Diodes (SBD)
MAS3795
Silicon epitaxial planar type
For high-speed switching circuits
Features
High-density mounting is possible
Optimum for high frequency rectification because of its short
reverse recovery time (trr)
Low forward voltage VF optimum for low voltage rectification
VF = < 0.3 V (at IF = 1 mA)
SSS-Mini type 3-pin package
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
VR
VRM
IF
IFM
Tj
Tstg
30
30
30
150
125
55 to +125
Unit
V
V
mA
mA
°C
°C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
Unit: mm
0.10+–00..0025
1: Anode
2: N.C.
3: Cathode
SSSMini3-F1 Package
Marking Symbol: M2
Internal Connection
3
Electrical Characteristics Ta = 25°C ± 3°C
12
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
Detection efficiency
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100
η Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 k, CL = 10 pF
30
0.3
1.0
1.5
1.0
65
µA
V
pF
ns
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz 3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100
Publication date: June 2002
SKH00117AED
1

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