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KMMR16R8CC fiches techniques PDF

Samsung Semiconductor - (KMMR16R8xC / KMMR18R8xC) SDRAM

Numéro de référence KMMR16R8CC
Description (KMMR16R8xC / KMMR18R8xC) SDRAM
Fabricant Samsung Semiconductor 
Logo Samsung Semiconductor 





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KMMR16R8CC fiche technique
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KMMR16R84(6/8/C/G)C
KMMR18R84(6/8/C/G)C
Preliminary
4/6/8/12/16d RIMMTM Module with 128Mb RDRAMs
4/6/8/12/16d RIMMTM Module with 144Mb RDRAMs
Overview
The Rambus® RIMM™ module is a general purpose high-
performance memory subsystem suitable for use in a broad
range of applications including computer memory, personal
computers, workstations, and other applications where high
bandwidth and low latency are required.
The Rambus RIMM module consists of 128Mb/144Mb
Direct Rambus DRAM devices. These are extremely high-
speed CMOS DRAMs organized as 8M words by 16 or 18
bits. The use of Rambus Signaling Level (RSL) technology
permits 600MHz or 800MHz transfer rates while using
conventional system and board design technologies.
RDRAM devices are capable of sustained data transfers at
1.25 ns per two bytes (10ns per 16 bytes).
The RDRAM architecture enables the highest sustained
bandwidth for multiple, simultaneous, randomly addressed,
memory transactions. The separate control and data buses
with independent row and column control yield over 95%
bus efficiency. The RDRAM's 32-banks architecture
supports up to four simultaneous transactions per device.
Features
High speed 800 and 600MHz RDRAM storage
184 edge connector pads with 1mm pad spacing
Maximum module PCB size : 133.5mm x 34.93mm x
1.37mm (5.21x 1.375x 0.05)
Each RDRAM has 32 banks, for a total of 512, 384, 256,
192, or 128 banks on each 256/288MB, 192/216MB,
128/144MB, 96/108MB, or 64/72MB module respectively
Gold plated edge connector pad contacts
Serial Presence Detect(SPD) support
Operates from a 2.5 volt supply (±5%)
Low power and powerdown self refresh modes
Separate Row and Column buses for higher efficiency
RDRAMs use µ−BGA package type
Key Timing Parameters/Part Numbers
The following table lists the frequency and latency bins
available from RIMM modules. An optional ‘S’designator
instead of ‘R’followed by ‘hyphen(-)’indicates low power
modules.
TABLE 1. Part Number by Freq. & Latency
Speed
Organization
I/O trac (Row
Binning Freq. Access
MHz Time) ns
Part Numbera
32M x 16/18
48M x 16/18
64M x 16/18
96M x 16/18
128M x 16/18
-RG6
-RK8
-RM8
-RG6
-RK8
-RM8
-RG6
-RK8
-RM8
-RG6
-RK8
-RM8
-RG6
-RK8
-RM8
600
800
800
600
800
800
600
800
800
600
800
800
600
800
800
53 KMMR16/18R84C-RG6
45 KMMR16/18R84C-RK8
40 KMMR16/18R84C-RM8
53 KMMR16/18R86C-RG6
45 KMMR16/18R86C-RK8
40 KMMR16/18R86C-RM8
53 KMMR16/18R88C-RG6
45 KMMR16/18R88C-RK8
40 KMMR16/18R88C-RM8
53 KMMR16/18R8CC-RG6
45 KMMR16/18R8CC-RK8
40 KMMR16/18R8CC-RM8
53 KMMR16/18R8GC-RG6
45 KMMR16/18R8GC-RK8
40 KMMR16/18R8GC-RM8
a. -S designator is used for modules with lower self-refresh current.
Form Factor
The Rambus RIMM modules are offered in a 184-pad 1mm
edge connector pad pitch form factor suitable for 184 contact
RIMM connectors. The RIMM module is suitable for
desktop and other system applications.
Note: On two sided modules, RDRAMs are also installed on bottem side of PCB.
Figure 1: Rambus RIMM Module without heat spreader
Page 1
Rev.0.9 Apr. 1999

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