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PDF IRFNG40 Data sheet ( Hoja de datos )
| Número de pieza | IRFNG40 | |
| Descripción | POWER MOSFET N-CHANNEL | |
| Fabricantes | International Rectifier | |
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Provisional Data Sheet No. PD-9.1555
HEXFET® POWER MOSFET
IRFNG40
N-CHANNEL
1000 Volt, 3.5Ω HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits.
The Surface Mount Device (SMD-1) package repre-
sents another step in the continual evolution of sur-
face mount technology. The SMD-1 will give
designers the extra flexibility they need to increase
circuit board density. International Rectifier has en-
gineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electrical performance.
Product Summary
Part Number BVDSS
IRFNG40
1000V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Light-weight
RDS(on)
3.5Ω
ID
3.9A
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRFNG40
3.9
2.5
15.6
125
1.0
±20
530
3.9
12.5
1.0
-55 to 150
300 (for 5 seconds)
2.6 (typical)
Units
A
W
W/K
V
mJ
A
mJ
V/ns
oC
g
To Order
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IRFNG40 Device
10
Index
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1
0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
P DM
t1
t2
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 12b — Unclamped Inductive Waveforms
Fig. 12c — Max. Avalanche Energy vs. Current
To Order
Fig. 13a — Gate Charge Test Circuit
5 Page | ||
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| PDF Descargar | [ Datasheet IRFNG40.PDF ] | |
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