DataSheetWiki


IRFN054 fiches techniques PDF

International Rectifier - POWER MOSFET N-CHANNEL

Numéro de référence IRFN054
Description POWER MOSFET N-CHANNEL
Fabricant International Rectifier 
Logo International Rectifier 





1 Page

No Preview Available !





IRFN054 fiche technique
Previous Datasheet
www.DataSheet4U.com
Index
Next Data Sheet
Provisional Data Sheet No. PD-9.1543A
HEXFET® POWER MOSFET
IRFN054
N-CHANNEL
60 Volt, 0.020HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits.
The Surface Mount Device (SMD-1) package repre-
sents another step in the continual evolution of sur-
face mount technology. The SMD-1 will give
designers the extra flexibility they need to increase
circuit board density. International Rectifier has en-
gineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electrical performance.
Product Summary
Part Number BVDSS
IRFN054
60V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Light-weight
RDS(on)
0.020
ID
55A*
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRFN054
55*
40
256
150
1.2
±20
480
55
15
4.5
-55 to 150
300 (for 5 seconds)
2.6 (typical)
Units
A
W
W/K 
V
mJ
A
mJ
V/ns
oC
g
To Order

PagesPages 6
Télécharger [ IRFN054 ]


Fiche technique recommandé

No Description détaillée Fabricant
IRFN054 POWER MOSFET N-CHANNEL International Rectifier
International Rectifier
IRFN054SMD N-CHANNEL POWER MOSFET Seme LAB
Seme LAB

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche