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FLM3742-12F fiches techniques PDF

Eudyna Devices - C-Band Internally Matched FET

Numéro de référence FLM3742-12F
Description C-Band Internally Matched FET
Fabricant Eudyna Devices 
Logo Eudyna Devices 





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FLM3742-12F fiche technique
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FLM3742-12F
FEATURES
• High Output Power: P1dB = 41.5dBm (Typ.)
• High Gain: G1dB = 11.5dB (Typ.)
• High PAE: ηadd = 40% (Typ.)
• Low IM3 = -46dBc@Po = 30.5dBm
• Broad Band: 3.7 ~ 4.2GHz
• Impedance Matched Zin/Zout = 50
• Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM3742-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
15 V
-5 V
Total Power Dissipation
PT Tc = 25°C
57.6 W
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with
gate resistance of 50.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Symbol
IDSS
gm
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 3400mA
Min.
-
-
Limit
Typ. Max.
5800 8700
2900 -
Pinch-off Voltage
Vp VDS = 5V, IDS = 300mA -1.0 -2.0 -3.5
Gate Source Breakdown Voltage VGSO IGS = -300µA
-5.0 -
-
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
P1dB
G1dB
Idsr
ηadd
VDS =10V,
IDS = 0.55 IDSS (Typ.),
f = 3.7 ~ 4.2 GHz,
ZS=ZL= 50 ohm
40.5 41.5 -
10.5 11.5 -
- 3250 3800
- 40 -
°C
°C
Unit
mA
mS
V
V
dBm
dB
mA
%
Gain Flatness
G
- - ±0.6
dB
3rd Order Intermodulation
Distortion
f = 4.2 GHz, f = 10 MHz
IM3 2-Tone Test
Pout = 30.5dBm S.C.L.
-44 -46 -
dBc
Thermal Resistance
Rth Channel to Case
- 2.3 2.6
°C/W
Channel Temperature Rise
CASE STYLE: IK
Tch
10V x Idsr x Rth
- - 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.3
August 2004
1

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