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Número de pieza | VSC7991 | |
Descripción | SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver | |
Fabricantes | Vitesse Semiconductor | |
Logotipo | ||
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VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
SONET/SDH 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
Features
• Maximum Rise/Fall Times of 38ps
• High-Speed Operation
(Up to 10.7Gb/s NRZ Data)
• Differential Inputs
• Single-Supply
• CML-Compatible Data Inputs
• On-Chip 50Ω Input Terminations
• 50Ω Output Impedance
General Description
The VSC7991 is a single 7V supply, 10.7Gb/s Electroabsorption Modulator (EAM)/laser diode driver with
direct access to the laser modulation FETs. Laser offset and modulation currents are set by external components
allowing precision monitoring and setting of the voltage levels. Data inputs are differentially terminated to 50Ω.
Applications
• SONET/SDH @ 2.488Gb/s, 9.952Gb/s, 10.7Gb/s
VSC7991 Block Diagram
50Ω(1)
DIN
NDIN
50Ω(1)
Note: (1) On-die components.
DCC
VIP
60Ω(1)
60Ω(1)
300Ω(1)
IMOD
NDOUT
DOUT
300Ω(1)
IB
IBN
IP
G52321-0, Rev 2.3
02/26/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected]
Internet: www.vitesse.com
Page 1
1 page www.DataSheet4U.com
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
SONET/SDH 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
Table 5: Pad Coordinates
Pad
Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Signal
Name
GND
NDIN
GND
GND
GND
GND
GND
DIN
GND
NC
GND
GND
VDCC
VSS
VSS
VSS
VSS
VIP
GND
GND
IP
IP
IBN
IBN
Coordinates (µm)
X
2296
2296
2296
2296
2296
2296
2296
2296
2296
2296
2146
1996
1846
1696
1546
1396
1246
1027
808
658
508
358
208
58
Y
1546
1396
1246
1061.5
877
692.5
508
358
208
58
58
58
58
58
58
58
58
58
58
58
58
58
58
58
Pad
Number
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Signal
Name
GND
NDOUT
GND
GND
GND
GND
GND
DOUT
GND
IB
IB
GND
GND
GND
GND
GND
GND
VSS
VSS
VSS
VSS
GND
GND
GND
Coordinates (µm)
X
58
58
58
58
58
58
58
58
58
58
208
358
508
658
808
958
1108
1258
1408
1558
1708
1858
2008
2158
Y
208
358
508
692.5
877
1061.5
1246
1396
1546
1696
1696
1696
1696
1696
1696
1696
1696
1696
1696
1696
1696
1696
1696
1696
G52321-0, Rev 2.3
02/26/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Internet: www.vitesse.com
Page 5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet VSC7991.PDF ] |
Número de pieza | Descripción | Fabricantes |
VSC7991 | SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver | Vitesse Semiconductor |
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