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PDF NTHD3101F Data sheet ( Hoja de datos )
| Número de pieza | NTHD3101F | |
| Descripción | Power MOSFET and Schottky Diode | |
| Fabricantes | ON Semiconductor | |
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NTHD3101F
Power MOSFET and
Schottky Diode
−20 V, FETKYt, P−Channel, −4.4 A, with
4.1 A Schottky Barrier Diode, ChipFETt
Features
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package
• Leadless SMD Package Provides Great Thermal Characteristics
• Independent Pinout to each Device to Ease Circuit Design
• Trench P−Channel for Low On Resistance
• Ultra Low VF Schottky
• Pb−Free Packages are Available
Applications
• Li−Ion Battery Charging
• High Side DC−DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t≤5s
Steady
State
t≤5s
TJ = 25°C
TJ = 85°C
TJ = 25°C
TJ = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
IDM
TJ, TSTG
−20
±8.0
−3.2
−2.3
−4.4
1.1
2.1
−13
−55 to
150
V
V
A
W
A
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS 2.5 A
TL 260 °C
SCHOTTKY DIODE MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value Units
Peak Repetitive Reverse Voltage
VRRM
20
V
DC Blocking Voltage
VR 20 V
Average Rectified
Forward Current
Steady
State
t≤5s
TJ = 25°C
IF
2.2 V
4.1 A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
http://onsemi.com
V(BR)DSS
−20 V
VR MAX
20 V
MOSFET
RDS(on) TYP
64 mW @ −4.5 V
85 mW @ −2.5 V
SCHOTTKY DIODE
VF TYP
0.510 V
ID MAX
−4.4 A
IF MAX
4.1 A
SA
G
D
P−Channel MOSFET
C
Schottky Diode
8
1
ChipFET
CASE 1206A
STYLE 3
PIN
CONNECTIONS
1
A
2
A
S
3
G
4
8
C
7
C
6
D
D
5
MARKING
DIAGRAM
18
27
36
45
D1 = Specific Device Code
M = Month Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
Publication Order Number:
NTHD3101F/D
1 page  
NTHD3101F
TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10 10
1 TJ = 150°C
1 TJ = 150°C
TJ = 25°C
0.1
0.20
TJ = −55°C
0.40 0.60 0.80
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 11. Typical Forward Voltage
1E−3
100E−6
10E−6
TJ = 150°C
TJ = 100°C
0.1
0.20
TJ = 25°C
0.40 0.60 0.80
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 12. Maximum Forward Voltage
10E+0
1E+0
100E−3
TJ = 150°C
TJ = 100°C
1E−6
10E−3
100E−9
TJ = 25°C
10E−9
0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Typical Reverse Current
1E−3
100E−6
20 0
TJ = 25°C
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. Maximum Reverse Current
20
3.5
3
2.5
2
1.5
1
0.5
0
25
dc
square wave
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
freq = 20 kHz
45 65 85 105 125 145 165
TL, LEAD TEMPERATURE (°C)
Figure 15. Current Derating
1.8
1.6
1.4 square wave dc
1.2 Ipk/Io = p
1 Ipk/Io = 5
0.8 Ipk/Io = 10
0.6 Ipk/Io = 20
0.4
0.2
0
0 0.5 1 1.5 2 2.5 3 3.5
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 16. Forward Power Dissipation
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| PDF Descargar | [ Datasheet NTHD3101F.PDF ] | |
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