PDF IRG4PH50UDPBF Data sheet ( Hoja de datos )

Número de pieza	IRG4PH50UDPBF
Descripción	INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes	International Rectifier
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No Preview Available ! www.DataSheet4U.com PD -95190 IRG4PH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free G E n-channel VCES = 1200V VCE(on) typ. = 2.78V @VGE = 15V, IC = 24A Benefits • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing TO-247AC Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 1200 45 24 180 180 16 180 ± 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m) Units V A V W °C Thermal Resistance RθJC RθJC RθCS RθJA Wt www.irf.com Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– 6 (0.21) Max. 0.64 0.83 ––– 40 ––– Units °C/W g (oz) 1 04/26/04 1 page www.DataSheet4U.com 7000 6000 5000 4000 3000 2000 1000 0 1 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc Cies Coes Cres 10 100 VCE , Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage IRG4PH50UDPbF 20 VCC = 400V I C = 24A 16 12 8 4 0 0 40 80 120 160 200 QG , Total Gate Charge (nC) Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 5.00 VCC = 480V VGE TJ = = 15V 25 ° C 4.60 IC = 245A 4.20 3.80 3.40 3.00 0 10 20 30 40 RG , Gate Resistance (OΩhm) 50 Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 100 RG = O5.h0mΩ VGE = 15V VCC = 800V 10 IC = 48 A IC = 24 A IC = 12 A 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 5 Page www.DataSheet4U.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 11 Page

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