(PDF) GTS217E Datasheet - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	GTS217E
Descripción	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	GTM
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No Preview Available ! www.DataSheet4U.com ISSUED DATE :2004/10/13 REVISED DATE :2006/12/25B GTS217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 22m 7A Description The GTS217E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features Low on-resistance Capable of 2.5V gate drive *Optimal DC/DC battery application Package Dimensions REF. A A1 b c D Millimeter Min. Max. - 1.20 0.05 0.15 0.19 0.30 0.09 0.20 2.90 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 6.60 4.30 4.50 0.65 BSC 0.45 0.75 0° 8° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 20 ±12 7 5.7 30 1.5 0.012 -55 ~ +150 Unit V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a Value 83 Unit /W GTS217E Page: 1/4 1 page

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PDF GTS217E Data sheet ( Hoja de datos )