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PDF M63840KP Data sheet ( Hoja de datos )
| Número de pieza | M63840KP | |
| Descripción | (M63840xP) 8-Unit 500mA Source Type Darlington Transistor-Array | |
| Fabricantes | Mitsubishi Electric | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de M63840KP (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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PRELIMINARY
MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】
M63840P/FP/KP
8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode
DESCRIPT ION
＊Notice: This is not a f inal specif ication.
Some parametric limits are subject to change.
PIN CONFIGURATION （TOP VIEW）
M63840P/FP/KP are eight-circuit output-sourcing Darling-
ton transistor array .The circuits are made of PNP and
NPN transistors. Both the semiconductor integrated
IN1→ 1
18 →O1
circuits perf orm high-current driv ing with extremely low
IN2→ 2
17 →O2
input-current supply .
IN3→ 3
16 →O3
FE AT URES
High breakdown v oltage （BVCEO≧ 40V）
High-current driv ing （IO(max)＝－500mA ）
With output clamping diodes
Driv ing av ailable with TTL output or C-MOS IC output
Wide operating temperature range (Ta= -40～+85℃)
Output current-sourcing ty pe
INPUT
IN4→ 4
IN5→ 5
15 →O4
14 →O5
OUT P UT
IN6→ 6
13 →O6
IN7→ 7
IN8→ 8
12 →O7
11 →O8
Vs 9
10 GND
Package type 18P4G(P)
APPL ICAT ION
Driv es of relay s, printers, LEDs, f luorescent display
tubes and lam ps. and interf aces between MOS-bipolar
logic sy stems and relay s, solenoids, of small motors.
FUNCT ION
The M63840P/FP/KP each hav e eight circuits, which are
made of input inv erters and current-sourcing outputs.
The output are made of PNP transistors and NPN
Darlington transistors. The PNP transistor base current
is constant. A clamping diode is prov ided between each
output and GND. Vs and GND are used commonly
among the eight circuits.
The inputs hav e resistance of 10kΩ, and v oltage of up
to 15V is applicable. Output current is 500mA maximum.
Supply v oltage VS is 40V maximum.
The M63840FP/KP is enclosed in a molded small f lat
package, enabling space-sav ing design.
入力
NC 1
IN1→ 2
IN2→ 3
IN3→ 4
IN4→ 5
IN5→ 6
20 NC
19 →O1
18 →O2
17 →O3
16 →O4
15 →O5
出力
IN6→ 7
IN7→ 8
IN8→ 9
14 →O6
13 →O7
12 →O8
Vs 10
11 GND
Package type 20P2N-A(FP)
20P2E-A(KP)
NC: No connection
CIRCUIT DIAGRAM （EACH CIRCUIT ）
Vs
20K
INPUT
10K
2.6K
100K
10K
5K
OUT P UT
GND
The eight circuits share Vs and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit: Ω
1/7 Jan/'06
1 page  
MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】
M63840P/FP/KP
8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode
Input Characteristics
0.5
Vs= 20V
0.4
Ta= -40℃
0.3
Ta= 25℃
0.2
0.1
Ta= 85℃
0
01
234
5
Input voltage VI (V)
Input Characteristics
5
Vs= 20V
4
3
Ta= -40℃
2
Ta= 25℃
1
Ta= 85℃
0
0
4
8 12 16
20
Input voltage VI (V)
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet M63840KP.PDF ] | |
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