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PDF M54513FP Data sheet ( Hoja de datos )

Número de pieza M54513FP
Descripción 8-UNIT 50mA TRANSISTOR ARRAY
Fabricantes Mitsubishi Electric 
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54513P/FP
8-UNIT 50mA TRANSISTOR ARRAY
DESCRIPTION
M54513P and M54513FP are eight-circuit transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
High breakdown voltage (BVCEO 40V)
Synchronizing current (Ic(max) = 50mA)
Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION
IN1
1
IN2
2
IN33
INPUT
IN4
4
IN5
5
IN6
6
IN77
IN88
GND 9
18
O1
17
O2
16 O3
15
O4
OUTPUT
14
O5
13
O6
12 O7
11 O8
10 NC
Package type 18P4G(P) NC : No connection
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M54513P and M54513FP each have eight circuits con-
sisting of NPN transistors. These ICs have resistance of 2
kat inputs and of 13.6kbetween the base and emitter.
The GND is used in common in each circuit.
The transistors allow synchronous flow of 50mA collector
current. A maximum of 40V voltage can be applied between
the collector and emitter.
The M54513FP is enclosed in a molded small flat package,
enabling space-saving design.
NC 1
IN1
2
IN2
3
IN34
INPUT
IN4
5
IN5
6
IN6
7
IN78
IN89
GND 10
20 NC
19
O1
18
O2
17 O3
16 O4
OUTPUT
15
O5
14
O6
13 O7
12 O8
11 NC
Package type 20P2N-A(FP) NC : No connection
CIRCUIT DIAGRAM
INPUT
2K
OUTPUT
13.6K
GND
The eight circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
Aug. 1999

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