|
|
Número de pieza | 2SC5954 | |
Descripción | Silicon NPN triple diffusion planar type | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC5954 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! wwwP.DoawtaeSr hTereat4nUs.icsotomrs
2SC5954
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity.
• Low collector-emitter saturation voltage VCE(sat)
• Full-pack package which can be installed to the heat sink with one
screw.
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
80
60
6
3
6
25
2.0
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
IEBO
hFE1 *
hFE2
VCE(sat)
fT
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 80 V, IE = 0
VCE = 40 V, IB = 0
VEB = 6 V, IC = 0
VCE = 4 V, IC = 0.5 A
VCE = 4 V, IC = 3 A
IC = 1 A, IB = 20 mA
VCE = 10 V, IC = 0.1 A, f = 10 MHz
IC = 1 A, Resistance loaded
IB1 = 0.1 A, IB2 = − 0.1 A
VCC = 50 V
60 V
100 µA
100 µA
100 µA
500 2 300
100
0.6 V
200 MHz
0.2 µs
1.5 µs
0.1 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1 500 to 1 500 1 300 to 2 300
Publication date: July 2004
SJD00319AED
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SC5954.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SC5950 | Silicon NPN Epitaxial Planar Type | Panasonic |
2SC5951 | Switching Regulator Applications | Sanyo Semicon Device |
2SC5954 | Silicon NPN triple diffusion planar type | Panasonic Semiconductor |
2SC5957 | Switching Regulator Applications | Sanyo Semicon Device |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |