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Sanyo Semicon Device - P-Channel Silicon MOSFET

Numéro de référence 3LP01N
Description P-Channel Silicon MOSFET
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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3LP01N fiche technique
www.DataSheet4U.com
Ordering number : ENN6646
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
3LP01N
P-Channel Silicon MOSFET
3LP01N
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2178
5.0 [3LP01N]
4.0 4.0
0.45
0.5
0.45 0.44
123
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
1.3
1.3
1 : Source
2 : Drain
3 : Gate
SANYO : NP
Ratings
--30
±10
--0.1
--0.4
0.4
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=±8V, VDS=0
VDS=--10V, ID=--100µA
VDS=--10V, ID=--50mA
min
--30
--0.4
80
Ratings
typ
max
Unit
V
--10 µA
±10 µA
--1.4 V
110 mS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90100 TS IM TA-2004 No.6646-1/4

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