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PDF 2SB1734 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1734 | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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2SB1734
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD2706
■ Features
• High forward current transfer ratio hFE
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−50
−50
−5
−200
−400
200
150
−55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: AF
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
VEBO
ICBO
hFE
VCE(sat)
fT
Cob
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IC = −2 mA
IC = −100 mA, IB = −10 mA
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
−50
−50
−5
85
V
V
V
− 0.1 µA
500
−300 mV
80 MHz
3 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2004
SJC00322AED
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1734.PDF ] | |
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