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دیتاشیت - GTM - PNP EPITAXIAL PLANAR TRANSISTOR

شماره قطعه GSBC856
شرح مفصل PNP EPITAXIAL PLANAR TRANSISTOR
تولید کننده GTM 
آرم GTM 


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GSBC856 شرح
www.DataSheet4U.com
ISSUED DATE :2005/06/08
REVISED DATE :
GSBC856
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GSBC856 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.
Package Dimensions
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VBE(on)1
Min.
-80
-65
-5
-
-
-
-
-
-600
VBE(on)2
hFE
fT
Cob
-
75
-
-
Ta = 25
Typ.
-
-
-
-
-75
-250
-700
-850
-
-
-
150
4.5
Max.
-
-
-
-15
-300
-650
-
-
-750
-820
800
-
-
Classification Of hFE
Rank
Range
9AA
125 - 250
9AB
220 - 475
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Ratings
+150
-55 ~ +150
-80
-65
-5
100
225
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
MHz
pF
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-30V
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz, IE=0A
9AC
420 – 800
Normal
75 - 475
1/2

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