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GSBC817 Datasheet دیتاشیت PDF دانلود

دیتاشیت - GTM - NPN EPITAXIAL PLANAR TRANSISTOR

شماره قطعه GSBC817
شرح مفصل NPN EPITAXIAL PLANAR TRANSISTOR
تولید کننده GTM 
آرم GTM 


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GSBC817 شرح
www.DataSheet4U.com
ISSUED DATE :2005/06/08
REVISED DATE :
GSBC817
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.
Package Dimensions
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVCES
BVEBO
ICES
IEBO
*VCE(sat)
*VBE(on)
*hFE
fT
Cob
Min.
50
45
50
5
-
-
-
-
100
-
-
Ta = 25
Typ.
-
-
-
-
-
-
-
-
-
100
-
Max.
-
-
-
-
100
100
700
1.2
630
-
12
Classification Of hFE
Rank
Range
8FA
100 - 250
8FB
160 - 400
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Ratings
+150
-55 ~ +150
50
45
5
800
225
Unit
V
V
V
mA
mW
Unit
V
V
V
V
nA
nA
mV
V
MHz
pF
Test Conditions
IC=100uA
IC=10mA
IC=100uA
IE=100uA
VCE=25V
VEB=4V
IC=500mA, IB=50mA
VCE=1V, IC=300mA
VCE=1V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz, IE=0A
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
8FC
250 - 630
1/2

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