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GSBAW56 Datasheet دیتاشیت PDF دانلود

دیتاشیت - GTM - SWITCHING DIODE

شماره قطعه GSBAW56
شرح مفصل SWITCHING DIODE
تولید کننده GTM 
آرم GTM 


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GSBAW56 شرح
www.DataSheet4U.com
CORPORATION ISSUED DATE :2005/12/23
REVISED DATE :
G S B AW 5 6
SURFACE MOUNT, SWITCHING DIODE
Description
The GSBAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar
technology, and encapsulated in a small SOT-323 plastic SMD package.
Package Dimensions
3
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
1
REF.
L1
L
b
c
e
Q1
2
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at TA = 25
Parameter
Junction Temperature
Storage Temperature
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
single diode loaded (note1)
double diode loaded (note1)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current (1ms)
Total Power Dissipation
Notes: 1. Device mounted on an FR4 printed-circuit board.
Symbol
Tj
Tstg
VRRM
VR
IF
IFRM
IFSM
PD
Ratings
+125
-65 ~ +150
85
75
150
130
500
1
250
Unit
V
V
mA
mA
A
mW
Electrical Characteristics (at TA = 25 unless otherwise noted)
Parameter
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Voltage
VR 85
-
V IR=100uA
VF(1)
-
715 mV IF=1mA
Forward Voltage
VF(2)
-
855 mV IF=10mA
VF(3)
-
1000
mV IF=50mA
VF(4)
-
1250
mV IF=150mA
Reverse Current
IR - 1 uA VR=80V
Diode Capacitance
CD
2 pF VR=0, f=1MHz
Reverse Recovery Time
Trr -
4 nS IF=IR=10mA, RL=100 measured at IR=1mA
GSBAW56
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