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GSBAV99W Datasheet دیتاشیت PDF دانلود

دیتاشیت - GTM - SWITCHING DIODE

شماره قطعه GSBAV99W
شرح مفصل SWITCHING DIODE
تولید کننده GTM 
آرم GTM 


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GSBAV99W شرح
www.DataSheet4U.com
G SB AV99W
ISSUED DATE :2004/09/24
REVISED DATE :
SURFACE MOUNT, SWITCHING DIODE
VOLTAGE 85V, CURRENT 0. 15A
Description
The GSBAV99W is designed for ultra high speed switching.
Package Dimensions
Parameter
Junction Temperature
Storage Temperature
Maximum Peak Repetitive Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 1uSec
Typical Junction Capacitance between Terminal (Note 1)
Maximum Reverse Recovery Time(Note 2)
Maximum Average Forward Rectified Current
Total Power Dissipation
Characteristics at Ta = 25
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
!
Symbol
Tj
Tstg
VRRM
VRMS
VDC
IFSM
CJ
TRR
Io
PD
Ratings
+150
-55 ~ +150
85
60
75
4.0
1.5
4.0
0.15
250
Unit
V
V
V
A
pF
nSec
A
mW
Characteristics
Symbol
Typ.
Maximum Instantaneous Forward Voltage
VF 1.25
Maximum Average Reverse Current
IR 1.0
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volt.
2. Measured at applied forward current of 5mA and reverse voltage of 10.0 volt.
3. ESD sensitive product handling required.
Unit
V
uA
Test Condition
IF = 150mA
VR = 75V
1/2

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