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دیتاشیت - GTM - SWITCHING DIODE

شماره قطعه GSBAS16
شرح مفصل SWITCHING DIODE
تولید کننده GTM 
آرم GTM 


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GSBAS16 شرح
www.DataSheet4U.com
CORPORATION ISSUED DATE :2006/12/12
REVISED DATE :
GSBAS16
SURFACE MOUNT, SWITCHING DIODE
VOLTAGE 85V, CURRENT 250mA
Description
The GSBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.
The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount
package.
Package Dimensions
Absolute Maximum Ratings at TA = 25
Parameter
Junction Temperature
Storage Temperature
Reverse Voltage
Repetitive Reverse Voltage
Forward Current
Repetitive Forward Current
Forward Surge Current (1ms)
Total Power Dissipation
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Symbol
Tj
Tstg
VR
VRRM
IO
IFM
IFSM
PD
Ratings
+150
-65 ~ +150
85
85
250
500
1000
225
Unit
V
V
mA
mA
mA
mW
Electrical Characteristics (at TA = 25 unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)
85
-
V IR=100uA
VF(1)
-
715 mV IF=1mA
Forward Voltage
VF(2)
-
855 mV IF=10mA
VF(3)
-
1000
mV IF=50mA
VF(4)
-
1250
mV IF=150mA
Reverse Current
IR - 1 uA VR=85V
Total Capacitance
CT
2 pF VR=0, f=1MHz
Reverse Recovery Time
Trr -
6 nS IF=IR=10mA, RL=100 measured at IR=1mA
GSBAS16
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