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GSB772SS Datasheet دیتاشیت PDF دانلود

دیتاشیت - GTM - PNP EPITAXIAL PLANAR TRANSISTOR

شماره قطعه GSB772SS
شرح مفصل PNP EPITAXIAL PLANAR TRANSISTOR
تولید کننده GTM 
آرم GTM 


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GSB772SS شرح
www.DataSheet4U.com
ISSUED DATE :2005/11/07
REVISED DATE :
GSB772SS
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GSB772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter
and voltage regulator.
Features
High current output up to -3A
Low saturation voltage
Package Dimensions
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature Range
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Total Power Dissipation
Symbol
Tj
TsTG
VCBO
VCEO
VEBO
IC
PD
Electrical Characteristics(Ta = 25 )
Symbol
Min.
Typ.
Max.
BVCBO
-40 -
-
BVCEO
-30 -
-
BVEBO
-5 -
-
ICBO
- - -1
IEBO
- - -1
*VCE(sat)
- - -0.5
*VBE(sat)
- -1.0 -2.0
*hFE1
30 -
-
*hFE2
100 - 500
fT - 80 -
Cob - 55 -
Classification Of hFE2
Rank
Q
Range
100 - 200
P
160 - 320
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0° 10°
Ratings
+150
-55 ~ +150
-40
-30
-5
-3
750
Unit
V
V
V
A
mW
Unit
V
V
V
uA
uA
V
V
MHz
pF
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-30V, IE=0
VEB=-3V, IC=0
IC=-2A, IB=-200mA
IC=-2A, IB=-200mA
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-5V, IC=-100mA, f=100MHz
VCB=-10V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
E
200 - 500
GSB772SS
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