DataSheetWiki

GSB772S Datasheet دیتاشیت PDF دانلود

دیتاشیت - GTM - PNP EPITAXIAL PLANAR TRANSISTOR

شماره قطعه GSB772S
شرح مفصل PNP EPITAXIAL PLANAR TRANSISTOR
تولید کننده GTM 
آرم GTM 


1 Page

		

No Preview Available !

GSB772S شرح
www.DataSheet4U.com
CORPORATION ISSUED DATE :2004/09/13
REVISED DATE :2004/11/29B
GSB772S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver.
Package Dimensions
D
E
S1 TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25
Collector to Emitter Voltage at Ta=25
Emitter to Base Voltage at Ta=25
Collector Current at Ta=25
Total Power Dissipation at Ta=25
Characteristics at Ta = 25
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-40
-30
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
160
80
55
Max.
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Classification Of hFE2
Rank
Range
Q
100-200
P
160-320
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
+150
-55 ~ +150
-40
-30
-5.0
-3.0
750
Unit
V
V
V
A
mW
Unit
V
V
V
uA
uA
V
V
MHz
Pf
Test Conditions
IC=-100uA
IC=-10mA
IE=-10uA
VCB=-30V
VEB=-3V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-20V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle
2%
E
250-500
1/2

قانون اساسیصفحه 2
دانلود [ GSB772S دیتاشیت ]



دیتاشیت توصیه

شماره قطعه شرح مفصل تولید کنندگان
GSB772S PNP EPITAXIAL PLANAR TRANSISTOR GTM
GTM
GSB772SS PNP EPITAXIAL PLANAR TRANSISTOR GTM
GTM

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2019   |   تماس با ما  |   جستجو