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GSB649A Datasheet دیتاشیت PDF دانلود

دیتاشیت - GTM - PNP EPITAXIAL PLANAR TRANSISTOR

شماره قطعه GSB649A
شرح مفصل PNP EPITAXIAL PLANAR TRANSISTOR
تولید کننده GTM 
آرم GTM 


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GSB649A شرح
www.DataSheet4U.com
ISSUED DATE :2003/10/24
REVISED DATE :2004/11/29B
GSB649A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GSB649A is designed for frequency power amplifier.
Features
*Low frequency power amplifier Complementary pair with GSD669A
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Absolute Maximum Ratings(Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Collect Current*(Pulse)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
Total Power Dissipation (TC=25 )
,unless otherwise specified)
VCBO
VCEO
VEBO
IC
ICP
Tj
TsTG
PD
PD
Ratings
-180
-160
-5
-1.5
-3
+150
-55 ~ +150
1
20
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Unit
V
V
V
A
A
W
W
Electrical Characteristics(Ta = 25
Symbol
Min.
Typ.
V(BR)CBO
-180
-
V(BR)CEO
-160
-
V(BR)EBO
-5
-
ICBO - -
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1 60 -
*hFE2 30 -
fT - 140
Cob - 27
,unless otherwise specified)
Max.
Unit
-V
-V
-V
-10 uA
-1 V
-1.5 V
200
-
- MHz
- pF
Test Conditions
IC=-1mA ,IE=0
IC=-10mA ,RBE=
IE=-1mA ,IC=0
VCB=-160V , IE=0
lC=-600mA,IB=-50mA
VCE=-5V,IC=-150mA
VCE=-5V,IC=-150mA
VCE=-5V,IC=-500mA
VCE=-5V,IC=-150mA
VCB=-10V ,IE=0,f=1MHz
* Pulse Test: Pulse Width 380us, Duty Cycle 2%
Classification Of hFE1
Rank
B
Range
60-120
C
100-200
1/3

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