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GSB1694 Datasheet دیتاشیت PDF دانلود

دیتاشیت - GTM - PNP EPITAXIAL TRANSISTOR

شماره قطعه GSB1694
شرح مفصل PNP EPITAXIAL TRANSISTOR
تولید کننده GTM 
آرم GTM 


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GSB1694 شرح
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GSB1694
PNP EPITAXIAL TRANSISTOR
Description
The GSB1694 is designed for general purpose amplifier applications.
Package Dimensions
ISSUED DATE :2006/01/18
REVISED DATE :
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Ratings
+150
-55~+150
-30
-30
-6
-1
225
Unit
V
V
V
A
mW
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
BVCBO
-30 -
BVCEO
-30 -
BVEBO
-6 -
ICBO
--
IEBO
--
VCE(sat)
--
*hFE
120 -
*fT - 320
Cob - 7
, unless otherwise noted)
Max.
Unit
Test Conditions
- V IC=-10uA, IE=0
- V IC=-1mA, IB=0
- V IE=-10uA, IC=0
-100
nA VCB=-30V, IE=0
-100
nA VEB=-6V, IC=0
-380
mV IC=-500mA, IB=-25mA
500 VCE=-2V, IC=-100mA
- MHz VCE=-2V, IE=100mA, f=100MHz
- pF VCB=-10V, f=1MHz
Classification Of hFE
Rank
Range
ESC
100 ~ 200
ESD
160 ~ 300
ESE
250 ~ 500
*Pulsed Test
GSB1694
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