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دیتاشیت - GTM - PNP EPITAXIAL PLANAR TRANSISTOR

شماره قطعه GSA1015
شرح مفصل PNP EPITAXIAL PLANAR TRANSISTOR
تولید کننده GTM 
آرم GTM 


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GSA1015 شرح
www.DataSheet4U.com
CORPORATION ISSUED DATE :2004/07/09
REVISED DATE :2004/11/29B
GSA1015
PNP EPITAXIAL PLANAR TANSISTOR
Description
The GSA1015 is designed for use in driver stage of AF amplifier and general purpose applications.
Features
*Collector-Base Voltage: VCBO =-50V
*Complementary to GSC1815
Package Dimensions
D
E
S1 TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Power Dissipation
Characteristics at
Ta = 25
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
IB
PD
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
hFE1
hFE2
fT
Cob
Min.
Typ.
Max.
-50 -
-
-50 -
-
-5 -
-
- - -100
- - -100
- - -0.3
- - -1.1
70 - 700
25 -
-
80 -
-
- - 7.0
Classification OF hFE1
Rank
Range
O
70-140
Y
120-240
Unit
V
V
V
nA
nA
V
V
MHz
pF
GR
200-400
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Ratings
+150
-55 ~ +150
-50
-50
-5
-150
-50
400
Unit
V
V
V
mA
mA
mW
Test Conditions
IC=-100uA , IE = 0
IC=-1mA, IB = 0
IE=-10uA, IC = 0
VCE=-50V, IE = 0
VEB=-5V, IC = 0
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-2mA
VCE=-6V, IC=-150mA
VCE=-10V, IC=-1mA, f=100MHz
VCB=-10V, IE = 0,f=1MHz
* Pulse Test: Pulse Width 380us, Duty Cycle 2%
L
350-700
1/2

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