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Datasheet GE80N03-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
GE8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GE80N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/06/24 REVISED DATE :
GE80N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 8m 80A
The GE80N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec  GTM mosfet | | |
| 2 | GE85L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/12/06 REVISED DATE :
GE85L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 6m 85A
The GE85L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec GTM mosfet | | |
| 3 | GE85T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/24 REVISED DATE :
GE85T03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 6m 75A
The GE85T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec GTM mosfet | | |
| 4 | GE85T08 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/03/08 REVISED DATE :
GE85T08
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
80V 13m 75A
The GE85T08 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe GTM mosfet | | |
| 5 | GE863 | GE863 Module Family Telit GE863 Family Product Description
80278ST10016a Rev. 2 – 14/11/05
Telit
GE863-GPS GE863-PY GE863-QUAD
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Telit Communications S.p.A
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Reproduction forbidden without written authorization by Telit Communications S.p.A. All Rights rese  Telit data | | |
| 6 | GE88L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/01/05 REVISED DATE :
GE88L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 5m 88A
The GE88L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec GTM mosfet | | |
| 7 | GE88LS02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/01/05 REVISED DATE :
GE88LS02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 5m 75A
The GE88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The through GTM mosfet | |
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