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Datasheet GE2026-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
GE2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GE200NB60S | N-CHANNEL IGBT
STGE200NB60S
N-channel 150A - 600V - ISOTOP Low drop PowerMESH™ IGBT
General features
TYPE VCES VCE(sat) (typ.) 1.2V 1.3V IC 150A 200A TC 100°C 25°C
STGE200NB60S 600V
■ ■ ■ ■ ■
High input impedance (voltage driven) Low on-voltage drop (Vcesat) Off losses include  ST Microelectronics igbt | | |
| 2 | GE2026 | NPN EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2005/09/05 REVISED DATE :
GE2026
Description Features
NP N E PITAX IAL PL ANAR T RANS ISTO R
The GE2026 is designed for general purpose application. Low Collector Saturation Voltage : VCE (sat) =1.0V (Max.) @ IC=2A, IB=0.2A,
Package Dimensions
REF. A b c D E L4  GTM transistor | | |
| 3 | GE20N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/06/28 REVISED DATE :
GE20N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 52m 20A
The GE20N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe GTM mosfet | | |
| 4 | GE2138 | 1.5A LOW DROPOUT VOLTAGE REGULATOR
ISSUED DATE :2006/04/14 REVISED DATE :
GE2138
Description
1 . 5 A C M O S L o w D ro p o u t Vo l t a g e R eg u l a t o r
The GE2138 series of positive, linear regulators feature low quiescent current (45 A typ.) with low dropout voltage, making them ideal for battery applica GTM regulator | | |
| 5 | GE2148 | 1.5A LOW DROPOUT VOLTAGE REGULATOR
ISSUED DATE :2006/04/14 REVISED DATE :
GE2148
Description
1 . 5 A C M O S L o w D ro p o u t Vo l t a g e R eg u l a t o r
The GE2148 series of positive, linear regulators feature low quiescent current (45 A typ.) with low dropout voltage, making them ideal for battery applica GTM regulator | | |
| 6 | GE2761 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/05/18 REVISED DATE :
GE2761
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600/650V 1.0 10A
The GE2761 series provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cos GTM mosfet | | |
| 7 | GE28F128K18 | (GE28FxxxKx) Intel StrataFlash Memory (J3) Intel StrataFlash® Synchronous Memory (K3/K18)
28F640K3, 28F640K18, 28F128K3, 28F128K18, 28F256K3, 28F256K18 (x16)
Datasheet
m o .c U 4 t e e h S a t a .D w w w
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Product Features
Performance — 110/115/120 ns Initial Access Speed for 64/128/256 Mbit Densities — 25 ns Asynchronous  Intel Corporation data | |
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