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PDF HMC474SC70 Data sheet ( Hoja de datos )
| Número de pieza | HMC474SC70 | |
| Descripción | SiGe HBT GAIN BLOCK MMIC AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
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v00.0607
5
Typical Applications
The HMC474SC70(E) is an ideal for:
• Cellular / PCS / 3G
• WiBro / WiMAX / 4G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
HMC474SC70 / 474SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Features
Gain: 15 dB
P1dB Output Power: +8 dBm
Output IP3: +20 dBm
Cascadable 50 Ohm I/Os
Single Supply: +3V to +10V
Industry Standard SC70 Package
Functional Diagram
General Description
The HMC474SC70(E) is a general purpose SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifier covering DC to 6 GHz. This
industry standard SC70 packaged amplifier can be
used as a cascadable 50 Ohm RF/IF gain stage with
up to +8 dBm output power. The HMC474SC70(E)
offers 15 dB of gain with a +20 dBm output IP3 at 850
MHz while requiring only 25 mA from a single positive
supply as low as +3V. The Darlington topology results
in reduced sensitivity to normal process variations and
excellent gain stability over temperature while requiring
a minimal number of external bias components.
5 - 70
Electrical Specifications, Vs= 5V, Rbias= 110 Ohm, TA = +25° C
Parameter
Min.
Gain
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
12
10
7
Gain Variation Over Temperature
DC - 6.0 GHz
Input Return Loss
DC - 5.0 GHz
5.0 - 6.0 GHz
Output Return Loss
DC - 5.0 GHz
5.0 - 6.0 GHz
Reverse Isolation
DC - 6.0 GHz
Output Power for 1 dB Compression (P1dB)
0.5 - 4.0 GHz
5.0 - 6.0 GHz
5
3
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
DC - 5.0 GHz
5.0 - 6.0 GHz
Noise Figure
DC - 5.0 GHz
5.0 - 6.0 GHz
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
Typ.
15
13
10
0.01
15
14
15
12
17
8
6
20
18
3
3.9
25
Max.
0.015
33
Units
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dB
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
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5
Pin Descriptions
Pin Number
Function
1, 2, 4, 5
GND
3 RFIN
6 RFOUT
v00.0607
HMC474SC70 / 474SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Description
These pins must be connected to RF/DC ground.
This pin is DC coupled.
An off chip DC blocking capacitor is required.
RF output and DC Bias (Vcc) for the output stage.
Interface Schematic
Application Circuit
Recommended Bias Resistor Values
for Icc= 25 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
3V 5V 6V 8V
RBIAS VALUE
30 Ω 110 Ω 150 Ω 240 Ω
RBIAS POWER RATING
1/8 W 1/8 W 1/4 W 1/2 W
10V
300 Ω
1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
5 - 74
Recommended Component Values for Key Application Frequencies
Component
L1
C1, C2
50
270 nH
0.01 μF
900
56 nH
100 pF
1900
18 nH
100 pF
Frequency (MHz)
2200
2400
18 nH
15 nH
100 pF
100 pF
3500
8.2 nH
100 pF
5200
6.8 nH
100 pF
5500
3.3 nH
100 pF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC474SC70.PDF ] | |
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