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GE03N70 fiches techniques PDF

GTM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence GE03N70
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant GTM 
Logo GTM 





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GE03N70 fiche technique
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Pb Free Plating Product
ISSUED DATE :2005/01/04
REVISED DATE :
GE03N70
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS 600/650/700V
RDS(ON)
4.0
ID 3.3A
Description
The GE03N70 series are specially designed as main switching devices for universal 90~265VAC off-line
AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag
in the toughest power system with the best combination of fast switching, ruggedized design and
cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for
switch mode power supplies, DC-AC converters and high current high speed switching circuits.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching Speed
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
-/A/H
VDS
Gate-Source Voltage
Continuous Drain Current , VGS@10V
Continuous Drain Current , VGS@10V
Pulsed Drain Current1,
Total Power Dissipation
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
EAS
IAR
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
EAR
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
600/650/700
20
3.3
2.1
13.2
45
0.36
85
3.3
3.3
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Value
2.8
62
Unit
/W
/W
1/5

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