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GD751SD Datasheet دیتاشیت PDF دانلود

دیتاشیت - GTM - SURFACE MOUNT SCHOTTKY BARRIER DIODE

شماره قطعه GD751SD
شرح مفصل SURFACE MOUNT SCHOTTKY BARRIER DIODE
تولید کننده GTM 
آرم GTM 


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GD751SD شرح
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GD751SD
ISSUED DATE :2004/09/20
REVISED DATE :
S U RFAC E MO U NT, S CH OTT K Y B AR R IE R DI OD E
VOLTAGE 40V, CURRENT 0. 03A
Description
The GD751SD is designed for high speed switching for detection and high reliability.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.85 1.05
0 0.10
0.80 1.00
1.15 1.45
1.60 1.80
2.30 2.70
REF.
L
b
c
Q1
Millimeter
Min. Max.
0.20
0.25
0.10
0.40
0.40
0.18
0.15 BSC.
Parameter
Junction Temperature
Storage Temperature
Maximum Peak Repetitive Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Maximum Average Forward Rectified Current
Total Power Dissipation
Characteristics at Ta = 25
Symbol
Tj
Tstg
VRRM
VRMS
VDC
IFSM
CJ
Io
PD
Characteristics
Symbol
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
VF
IR
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 1.0 volt.
2. ESD sensitive product handling required.
Max
0.37
0.5
Ratings
+125
-40 ~ +125
40
28
40
0.2
2.0
0.03
225
Unit
V
V
V
A
pF
A
mW
Unit Test Condition
V IF = 1mA
uA VR = 30V
1/2

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