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PDF SD210DE Data sheet ( Hoja de datos )
| Número de pieza | SD210DE | |
| Descripción | (SD210DE / SD214DE) High Speed N-channel Lateral Dmos Fet Switch | |
| Fabricantes | Linear Integrated Systems | |
| Logotipo |  |
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Linear Integrated Systems
Product Summary
SD210DE/214DE
N-CHANNEL LATERAL
DMOS SWITCH
Features
• Ultra-High Speed Switching—tON: 1 ns
• Ultra-Low Reverse Capacitance: 0.2 pF
• Low Guaranteed rDS @5 V
• Low Turn-On Threshold Voltage
• N-Channel Enhancement Mode
Benefits
• High-Speed System Performance
• Low Insertion Loss at High Frequencies
• Low Transfer Signal Loss
• Simple Driver Requirement
• Single Supply Operation
Applications
• Fast Analog Switch
• Fast Sample-and-Holds
• Pixel-Rate Switching
• DAC Deglitchers
• High-Speed Driver
Description
The SD210DE/214DE are enhancement-mode MOSFETs
designed for high speed low-glitch switching in audio, video,
and high-frequency applications. The SD214DE is normally used
for ±10-V analog switching. These MOSFETs utilize lateral
construction to achieve low capacitance and ultra-fast switching
speeds. These MOSFETs do not have a gate protection Zener
diode which results in lower gate leakage and ± voltage capability
from gate to substrate. A poly-silicon gate is featured for
manufacturing reliability.
For similar products see: quad array—SD5000/5400 series, and
Zener protected—SD211DE/SST211 series.
Absolute Maximum Ratings (TA = 250C Unless Otherwise Noted)
Gate-Drain, Gate-Source Voltage ......................................................... ± 40 V
Gate-Substrate Voltage ......................................................................... ± 30 V
Drain-Source Voltage
(SD210DE) ....................................... 30 V
(SD214DE) ....................................... 20 V
Source-Drain Voltage
(SD210DE) ....................................... 10 V
(SD214DE) ....................................... 20 V
Drain-Substrate Voltage
(SD210DE) ....................................... 30 V
(SD214DE) ....................................... 25 V
Source-Substrate Voltage
(SD210DE) ....................................... 15 V
(SD214DE) ....................................... 25 V
Drain Current ........................................................................................ 50 mA
Lead Temperature (1/16” from case for 10 seconds) ............................. 3000C
Storage Temperature .................................................................... -65 to 1500C
Operating Junction Temperature ................................................. -55 to 1250C
Power Dissipation 300 mWa ....................................................................................................................................
Notes:
a. Derate 3 mW/0C above 250C
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SD210DE.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SD210DE | (SD210DE / SD214DE) High Speed N-channel Lateral Dmos Fet Switch | Linear Integrated Systems |
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