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GD500SD fiches techniques PDF

GTM - SURFACE MOUNT SCHOTTKY BARRIER DIODE

Numéro de référence GD500SD
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE
Fabricant GTM 
Logo GTM 





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GD500SD fiche technique
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GD500SD
ISSUED DATE :2004/09/20
REVISED DATE :
S U RFAC E MO U NT, S CH OTT K Y B AR R IE R DI OD E
VOLTAGE 45V, CURRENT 0. 1A
Description
The GD500SD is designed for low power rectification and high reliability.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.85 1.05
0 0.10
0.80 1.00
1.15 1.45
1.60 1.80
2.30 2.70
REF.
L
b
c
Q1
Millimeter
Min. Max.
0.20
0.25
0.10
0.40
0.40
0.18
0.15 BSC.
Parameter
Junction Temperature
Storage Temperature
Maximum Peak Repetitive Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Maximum Average Forward Rectified Current
Total Power Dissipation
Characteristics at Ta = 25
Symbol
Tj
Tstg
VRRM
VRMS
VDC
IFSM
CJ
Io
PD
Characteristics
Symbol
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
VF
IR
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 10.0 volt.
2. ESD sensitive product handling required.
Max
0.45
1.0
Ratings
+125
-40 ~ +125
45
32
40
1.0
6.0
0.1
225
Unit
V
V
V
A
pF
A
mW
Unit Test Condition
V IF = 10mA
uA VR = 10V
1/2

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